Weitere Produktangebote APTMC120AM55CT1AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTMC120AM55CT1AG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH SiC 1.2KV 55A Tube |
Produkt ist nicht verfügbar |
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| APTMC120AM55CT1AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTMC120AM55CT1AG | Hersteller : MICROSEMI |
APTMC120AM55CT1AG Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120AM55CT1AG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1200V 55A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
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| APTMC120AM55CT1AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules CC9701 |
Produkt ist nicht verfügbar |
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| APTMC120AM55CT1AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ |
Produkt ist nicht verfügbar |