Technische Details AS4C128M8D1-6TIN Alliance Memory
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 128Mx8bit, Clock frequency: 166MHz, Access time: 700ps, Case: TSOP66 II, Memory capacity: 1024Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Operating voltage: 2.3...2.7V.
Weitere Produktangebote AS4C128M8D1-6TIN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AS4C128M8D1-6TIN | Hersteller : Alliance Memory, Inc. |
 Description: IC DRAM 1GBIT PARALLEL 66TSOP II |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AS4C128M8D1-6TIN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 128Mx8bit Clock frequency: 166MHz Access time: 700ps Case: TSOP66 II Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
Produkt ist nicht verfügbar |
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| AS4C128M8D1-6TIN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 128Mx8bit Clock frequency: 166MHz Access time: 700ps Case: TSOP66 II Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
Produkt ist nicht verfügbar |