AS6C8016-55BIN Alliance Memory
auf Bestellung 151 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 18.82 EUR |
10+ | 17.34 EUR |
25+ | 15.21 EUR |
100+ | 14.74 EUR |
250+ | 14.72 EUR |
480+ | 13.99 EUR |
960+ | 13.52 EUR |
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Technische Details AS6C8016-55BIN Alliance Memory
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-LFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS6C8016-55BIN nach Preis ab 14.33 EUR bis 19.27 EUR
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AS6C8016-55BIN | Hersteller : Alliance Memory, Inc. |
Description: IC SRAM 8MBIT PARALLEL 48TFBGA Packaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 682 Stücke: Lieferzeit 21-28 Tag (e) |
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AS6C8016-55BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷5V; 55ns; TFBGA48; parallel Mounting: SMD Operating voltage: 2.7...5V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
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AS6C8016-55BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx16bit; 2.7÷5V; 55ns; TFBGA48; parallel Mounting: SMD Operating voltage: 2.7...5V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
Produkt ist nicht verfügbar |