AUIRFR024N Infineon Technologies
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Technische Details AUIRFR024N Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.
Weitere Produktangebote AUIRFR024N
Foto | Bezeichnung | Hersteller | Beschreibung |
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AUIRFR024N | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK Mounting: SMD Power dissipation: 45W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DPAK Drain-source voltage: 55V Drain current: 17A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AUIRFR024N | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 17A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRFR024N | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK Mounting: SMD Power dissipation: 45W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DPAK Drain-source voltage: 55V Drain current: 17A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |