Technische Details AUIRFS4410ZTRL Infineon / IR
Description: AUTOMOTIVE HEXFET N CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: D2PAK, Part Status: Active, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V.
Weitere Produktangebote AUIRFS4410ZTRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AUIRFS4410ZTRL | Hersteller : Infineon |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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AUIRFS4410ZTRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AUIRFS4410ZTRL | Hersteller : International Rectifier |
Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V |
Produkt ist nicht verfügbar |