BA159G B0G

BA159G B0G Taiwan Semiconductor


ba157g20series_i2106.pdf Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 1A 250ns 2-Pin DO-41 Bulk
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Technische Details BA159G B0G Taiwan Semiconductor

Description: DIODE GEN PURP 1A DO204AL, Packaging: Bulk, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.

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BA159G B0G BA159G B0G Hersteller : Taiwan Semiconductor Corporation BA157G%20SERIES_I2106.pdf Description: DIODE GEN PURP 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BA159G B0G BA159G B0G Hersteller : Taiwan Semiconductor BA157G_SERIES_G14-1918040.pdf Rectifiers 250ns 1A 1000V Fast Recovery Rectifier
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