BAS116

BAS116 Taiwan Semiconductor


bas116_f2001.pdf Hersteller: Taiwan Semiconductor
Diode Small Signal Switching 75V 0.2A 3-Pin SOT-23 T/R
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Technische Details BAS116 Taiwan Semiconductor

Description: DIODE GEN PURP 85V 215MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 85 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.

Weitere Produktangebote BAS116

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BAS116 BAS116 Hersteller : Diodes Incorporated ds30233.pdf Description: DIODE GEN PURP 85V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
BAS116 BAS116 Hersteller : Diodes Incorporated ds30233.pdf Description: DIODE GEN PURP 85V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
BAS116 BAS116 Hersteller : Taiwan Semiconductor Corporation BAS116_F2001.pdf Description: SOT-23, 75V, 0.2A, SWITCHING DIO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
BAS116 BAS116 Hersteller : Taiwan Semiconductor ds30233.pdf BAS116_F2001.pdf Diodes - General Purpose, Power, Switching Switching diode 225 mW
Produkt ist nicht verfügbar
BAS116 Hersteller : Nexperia ds30233.pdf BAS116_F2001.pdf Diodes - General Purpose, Power, Switching
Produkt ist nicht verfügbar
BAS116 BAS116 Hersteller : Infineon Technologies Infineon_BAS116SERIES_DS_v01_01_en-1226034.pdf Diodes - General Purpose, Power, Switching
Produkt ist nicht verfügbar
BAS116 BAS116 Hersteller : Diodes Incorporated ds30233.pdf BAS116_F2001.pdf Diodes - General Purpose, Power, Switching
Produkt ist nicht verfügbar