BAS 116 E6433 Infineon Technologies
Hersteller: Infineon TechnologiesDiodes - General Purpose, Power, Switching Silicon Low Leakage Diode
auf Bestellung 3981 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 0.85 EUR |
| 88+ | 0.59 EUR |
| 179+ | 0.29 EUR |
| 1000+ | 0.17 EUR |
| 2500+ | 0.15 EUR |
| 10000+ | 0.11 EUR |
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Technische Details BAS 116 E6433 Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.
Weitere Produktangebote BAS 116 E6433
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BAS116 E6433 | Hersteller : Infineon | SOT23 |
auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) |
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BAS116E6433 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 80V 250MA SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
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