BAS116QAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: DIODE GP 75V 300MA DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.12 EUR |
| 10000+ | 0.098 EUR |
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Technische Details BAS116QAZ Nexperia USA Inc.
Description: DIODE GP 75V 300MA DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS116QAZ nach Preis ab 0.038 EUR bis 0.75 EUR
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BAS116QAZ | Hersteller : Nexperia |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive AEC-Q101 3-Pin DFN-D EP T/R |
auf Bestellung 24970 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS116QAZ | Hersteller : Nexperia |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive AEC-Q101 3-Pin DFN-D EP T/R |
auf Bestellung 24970 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS116QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE GP 75V 300MA DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 11945 Stücke: Lieferzeit 21-28 Tag (e) |
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BAS116QAZ | Hersteller : Nexperia |
Diodes - General Purpose, Power, Switching BAS116QA/SOT1215/DFN1010D-3 |
auf Bestellung 11883 Stücke: Lieferzeit 14-28 Tag (e) |
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BAS116QAZ | Hersteller : Nexperia |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive AEC-Q101 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BAS116QAZ | Hersteller : Nexperia |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive AEC-Q101 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BAS116QAZ | Hersteller : Nexperia |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive AEC-Q101 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BAS116QAZ | Hersteller : NEXPERIA |
Rectifier Diode Switching 85V 0.3A 3000ns Automotive 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |