BAS16L-HG3-08 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA DFN1006-2A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GP 100V 250MA DFN1006-2A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2168 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
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Technische Details BAS16L-HG3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA DFN1006-2A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS16L-HG3-08 nach Preis ab 0.088 EUR bis 0.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS16L-HG3-08 | Hersteller : Vishay Semiconductors | Diodes - General Purpose, Power, Switching SWITCHING DIODE 2A 100V |
auf Bestellung 3298 Stücke: Lieferzeit 14-28 Tag (e) |
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BAS16L-HG3-08 | Hersteller : Vishay | Diode Small Signal Switching Si 0.25A Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS16L-HG3-08 | Hersteller : Vishay | Diode Small Signal Switching Si 0.25A Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS16L-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 250MA DFN1006-2A Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |