Technische Details BAS19-G3-18 Vishay
Description: DIODE GP 100V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 100 V.
Weitere Produktangebote BAS19-G3-18
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS19-G3-18 | Hersteller : Vishay |
 Diode Small Signal Switching 120V 0.35A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BAS19-G3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
Produkt ist nicht verfügbar |
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BAS19-G3-18 | Hersteller : Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 2.5A IFSM |
Produkt ist nicht verfügbar |