BAS21PG115 NXP
Hersteller: NXPDescription: NXP - BAS21PG115 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BAS21PG115 NXP
Description: BAS21PG - RECTIFIER DIODE, Packaging: Bulk, Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 225mA, Supplier Device Package: SOT-353, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 250 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V.
Weitere Produktangebote BAS21PG115
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BAS21PG115 | Hersteller : NXP USA Inc. |
Description: BAS21PG - RECTIFIER DIODE Packaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 225mA Supplier Device Package: SOT-353 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
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