Technische Details BAV19W-HE3-18 Vishay
Description: DIODE GEN PURP 100V 250MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote BAV19W-HE3-18
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BAV19W-HE3-18 | Hersteller : Vishay | Diode Small Signal Switching 120V 0.25A Automotive 2-Pin SOD-123 T/R |
Produkt ist nicht verfügbar |
||
BAV19W-HE3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 250MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
BAV19W-HE3-18 | Hersteller : Vishay Semiconductors | Small Signal Switching Diodes 120V 625mA 1A IFSM |
Produkt ist nicht verfügbar |