BAV21W-G RHG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.088 EUR |
| 6000+ | 0.083 EUR |
| 9000+ | 0.071 EUR |
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Technische Details BAV21W-G RHG Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 200MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V.
Weitere Produktangebote BAV21W-G RHG nach Preis ab 0.065 EUR bis 0.51 EUR
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BAV21W-G RHG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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BAV21W-G RHG | Hersteller : Taiwan Semiconductor | Diodes - General Purpose, Power, Switching 250V, 0.2A, Switching Diode & Array |
auf Bestellung 12982 Stücke: Lieferzeit 14-28 Tag (e) |
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BAV21W-G RHG | Hersteller : Taiwan Semiconductor |
 Rectifier Diode Small Signal Switching 250V 0.2A 50ns 2-Pin SOD-123 T/R |
Produkt ist nicht verfügbar |
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BAV21W-G RHG | Hersteller : Taiwan Semiconductor |
Diode Small Signal Switching 250V 0.2A 2-Pin SOD-123 T/R |
Produkt ist nicht verfügbar |