BAW27-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.059 EUR |
20000+ | 0.054 EUR |
30000+ | 0.051 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAW27-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 6 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 600mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: 175°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA, Current - Reverse Leakage @ Vr: 100 nA @ 60 V, Qualification: AEC-Q101.
Weitere Produktangebote BAW27-TAP nach Preis ab 0.04 EUR bis 0.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAW27-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 60V 600MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 100 nA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 11847 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
BAW27-TAP | Hersteller : Vishay Semiconductors | Small Signal Switching Diodes 75 Volt 200mA 4.0 Amp IFSM |
auf Bestellung 26864 Stücke: Lieferzeit 10-14 Tag (e) |
|