Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > BAW75-TAP
BAW75-TAP

BAW75-TAP Vishay General Semiconductor - Diodes Division

baw75.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 25V 300MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.064 EUR
30000+ 0.063 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details BAW75-TAP Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 25V 300MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DO-35 (DO-204AH), Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 25 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA, Current - Reverse Leakage @ Vr: 100 nA @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BAW75-TAP nach Preis ab 0.077 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BAW75-TAP BAW75-TAP Hersteller : Vishay General Semiconductor - Diodes Division baw75.pdf Description: DIODE GEN PURP 25V 300MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7622 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
77+ 0.34 EUR
158+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.083 EUR
5000+ 0.077 EUR
Mindestbestellmenge: 53
BAW75-TAP Hersteller : Vishay Semiconductors baw75-279708.pdf Diodes - General Purpose, Power, Switching 35 Volt 300mA 2ns
auf Bestellung 48460 Stücke:
Lieferzeit 14-28 Tag (e)