Produkte > INFINEON TECHNOLOGIES > BB814E7801GR1HTSA1
BB814E7801GR1HTSA1

BB814E7801GR1HTSA1 Infineon Technologies


INFNS16375-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 60000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3463+0.22 EUR
Mindestbestellmenge: 3463
Produktrezensionen
Produktbewertung abgeben

Technische Details BB814E7801GR1HTSA1 Infineon Technologies

Description: VARIABLE CAPACITANCE DIODE, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Diode Type: 1 Pair Common Cathode, Operating Temperature: -55°C ~ 125°C, Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz, Q @ Vr, F: 200 @ 2V, 100MHz, Capacitance Ratio Condition: C2/C8, Supplier Device Package: PG-SOT23-3-1, Part Status: Active, Voltage - Peak Reverse (Max): 18 V, Capacitance Ratio: 2.25.