BC847QAPN147 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1915643 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9812+ | 0.071 EUR |
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Technische Details BC847QAPN147 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1010B-6, Grade: Automotive, Qualification: AEC-Q101.