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BC856B-QVL

BC856B-QVL Nexperia


BC856_Q_BC857_Q_BC858_Q-2498468.pdf Hersteller: Nexperia
Bipolar Transistors - BJT BC856B-Q/SOT23/TO-236AB
auf Bestellung 9740 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
216+0.24 EUR
318+ 0.16 EUR
500+ 0.1 EUR
1112+ 0.047 EUR
2500+ 0.039 EUR
10000+ 0.029 EUR
50000+ 0.026 EUR
Mindestbestellmenge: 216
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Technische Details BC856B-QVL Nexperia

Description: TRANS PNP 65V 0.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 250 mW, Qualification: AEC-Q101.

Weitere Produktangebote BC856B-QVL

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BC856B-QVL BC856B-QVL Hersteller : Nexperia bc856-q_bc857-q_bc858-q.pdf Trans GP BJT PNP 65V 0.1A 250mW Automotive 3-Pin SOT-23
Produkt ist nicht verfügbar
BC856B-QVL Hersteller : NEXPERIA bc856-q_bc857-q_bc858-q.pdf Trans GP BJT PNP 65V 0.1A 250mW
Produkt ist nicht verfügbar
BC856B-QVL BC856B-QVL Hersteller : NEXPERIA BC856-Q_BC857-Q_BC858-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BC856B-QVL BC856B-QVL Hersteller : Nexperia USA Inc. BC856-Q_BC857-Q_BC858-Q.pdf Description: TRANS PNP 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BC856B-QVL BC856B-QVL Hersteller : NEXPERIA BC856-Q_BC857-Q_BC858-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar