Technische Details BC857AQBAZ Nexperia
Description: BC857AQB/SOT8015/DFN1110D-3, Packaging: Cut Tape (CT), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Supplier Device Package: DFN1110D-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 340 mW.
Weitere Produktangebote BC857AQBAZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| BC857AQBAZ | Hersteller : NEXPERIA |
 Trans GP BJT PNP 45V 0.1A 3-Pin DFN-D T/R |
Produkt ist nicht verfügbar |
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BC857AQBAZ | Hersteller : Nexperia USA Inc. |
Description: BC857AQB/SOT8015/DFN1110D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
Produkt ist nicht verfügbar |
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BC857AQBAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT BC857AQB/SOT8015/DFN1110D-3 |
Produkt ist nicht verfügbar |