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BC859BW,135 NEXPERIA


BC859W_860W.pdf Hersteller: NEXPERIA
Description: NEXPERIA - BC859BW,135 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 250000 Stücke:

Lieferzeit 14-21 Tag (e)
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Technische Details BC859BW,135 NEXPERIA

Description: TRANS PNP 30V 0.1A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-323, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BC859BW,135

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BC859BW,135 BC859BW,135 Hersteller : NEXPERIA 1746114262916054bc859w_860w.pdf Trans GP BJT PNP 30V 0.1A 200mW Automotive 3-Pin SC-70 T/R
Produkt ist nicht verfügbar
BC859BW,135 BC859BW,135 Hersteller : Nexperia 1746114262916054bc859w_860w.pdf Trans GP BJT PNP 30V 0.1A 200mW 3-Pin SC-70 T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
BC859BW,135 BC859BW,135 Hersteller : NEXPERIA BC859W_860W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
BC859BW,135 BC859BW,135 Hersteller : Nexperia USA Inc. BC859W_860W.pdf Description: TRANS PNP 30V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BC859BW,135 BC859BW,135 Hersteller : Nexperia BC859W_860W-1525757.pdf Bipolar Transistors - BJT BC859BW/SOT323/SC-70
Produkt ist nicht verfügbar
BC859BW,135 BC859BW,135 Hersteller : NEXPERIA BC859W_860W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar