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BCM856BSF NEXPERIA


bcm856bs_bcm856ds.pdf Hersteller: NEXPERIA
PNP/PNP matched double transistors
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Technische Details BCM856BSF NEXPERIA

Description: BCM856BS/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q100.

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BCM856BSF BCM856BSF Hersteller : NXP Semiconductors bcm856bs_bcm856ds.pdf Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
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BCM856BSF BCM856BSF Hersteller : Nexperia bcm856bs_bcm856ds.pdf Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
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BCM856BSF BCM856BSF Hersteller : Nexperia USA Inc. BCM856BS_BCM856DS.pdf Description: BCM856BS/SOT363/SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BCM856BSF BCM856BSF Hersteller : Nexperia BCM856BS_BCM856DS-1319525.pdf Bipolar Transistors - BJT BCM856BS/SOT363/SC-88
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