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BCP56H,115 NEXPERIA


BCP56H_SER.pdf Hersteller: NEXPERIA
Description: NEXPERIA - BCP56H,115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
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Technische Details BCP56H,115 NEXPERIA

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: SOT-223, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2.2 W, Qualification: AEC-Q101.

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BCP56H,115 BCP56H,115 Hersteller : Nexperia USA Inc. BCP56H_SER.pdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
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