BCR10PNH6730XTMA1 Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR10PNH6730XTMA1 Infineon Technologies
Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: PG-SOT363-PO.
Weitere Produktangebote BCR10PNH6730XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BCR10PNH6730XTMA1 | Hersteller : Infineon Technologies |
 Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
|
 |
BCR10PNH6730XTMA1 | Hersteller : Infineon Technologies |
Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO |
Produkt ist nicht verfügbar |