BD13710STU

BD13710STU onsemi / Fairchild


BD139_D-2310463.pdf Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
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Technische Details BD13710STU onsemi / Fairchild

Description: TRANS NPN 60V 1.5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.25 W.

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BD13710STU BD13710STU Hersteller : ON Semiconductor bd139-d.pdf Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
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BD13710STU BD13710STU Hersteller : onsemi bd137?pdf=Y Description: TRANS NPN 60V 1.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar