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BD13910S

BD13910S Fairchild Semiconductor

FAIRS45235-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 1.5A,
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 5419 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1219+0.6 EUR
Mindestbestellmenge: 1219
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Technische Details BD13910S Fairchild Semiconductor

Description: POWER BIPOLAR TRANSISTOR, 1.5A,, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.25 W.

Weitere Produktangebote BD13910S nach Preis ab 0.55 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BD13910S BD13910S Hersteller : onsemi BD135%2C137%2C139.pdf Description: TRANS NPN 80V 1.5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 379 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.34 EUR
100+ 0.93 EUR
Mindestbestellmenge: 17
BD13910S BD13910S Hersteller : onsemi / Fairchild BD139_D-2310463.pdf Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 760 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.72 EUR
38+ 1.37 EUR
100+ 0.99 EUR
500+ 0.81 EUR
1000+ 0.67 EUR
2000+ 0.57 EUR
4000+ 0.55 EUR
Mindestbestellmenge: 31
BD13910S Hersteller : ONSEMI FAIRS45235-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - BD13910S - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5419 Stücke:
Lieferzeit 14-21 Tag (e)
BD13910S BD13910S Hersteller : ON Semiconductor bd139-d.pdf Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag
Produkt ist nicht verfügbar
BD13910S BD13910S Hersteller : ON Semiconductor bd139-d.pdf Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag
Produkt ist nicht verfügbar
BD13910S BD13910S Hersteller : ON Semiconductor bd139-d.pdf Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag
Produkt ist nicht verfügbar
BD13910S BD13910S Hersteller : ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar