Technische Details BDP947 E6327 INFINEON
Description: GENERAL PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 5 W.
Weitere Produktangebote BDP947 E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BDP947E6327 | Hersteller : Infineon Technologies |
 Trans GP BJT NPN 45V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BDP947E6327 | Hersteller : Infineon Technologies |
Description: GENERAL PURPOSE TRANSISTOR Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 5 W |
Produkt ist nicht verfügbar |