BF771E6765N

BF771E6765N Infineon Technologies


INFNS10734-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23-3-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 111000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4157+0.17 EUR
Mindestbestellmenge: 4157
Produktrezensionen
Produktbewertung abgeben

Technische Details BF771E6765N Infineon Technologies

Description: RF TRANSISTOR, NPN, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 15dB, Power - Max: 580mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT23-3-4, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.