BF799E6327HTSA1 Infineon Technologies
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Technische Details BF799E6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 280mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 20V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Frequency - Transition: 800MHz, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Supplier Device Package: PG-SOT23, Part Status: Obsolete.
Weitere Produktangebote BF799E6327HTSA1
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BF799E6327HTSA1 | Hersteller : Infineon Technologies |
 Description: RF TRANS NPN 20V 800MHZ SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BF799E6327HTSA1 | Hersteller : Infineon Technologies |
Description: RF TRANS NPN 20V 800MHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete |
Produkt ist nicht verfügbar |