BS170-D27Z onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BS170-D27Z onsemi
Description: ONSEMI - BS170"D27Z - N CHANNEL MOSFET, 60V, 500mA, TO-92, tariffCode: 85412100, Transistormontage: Through Hole, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 500mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - Unlimited, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.1V, euEccn: NLR, Verlustleistung: 830mW, Bauform - Transistor: TO-92, Anzahl der Pins: 3Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: N Channel, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.2ohm, directShipCharge: 25, SVHC: No SVHC.
Weitere Produktangebote BS170-D27Z nach Preis ab 0.12 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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BS170-D27Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Mounting: THT Type of transistor: N-MOSFET On-state resistance: 5Ω Drain current: 0.5A Drain-source voltage: 60V Power dissipation: 0.83W Polarisation: unipolar Kind of package: reel; tape Technology: DMOS Kind of channel: enhanced Gate-source voltage: ±20V Case: TO92 Pulsed drain current: 1.2A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 590 Stücke: Lieferzeit 7-14 Tag (e) |
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BS170-D27Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Mounting: THT Type of transistor: N-MOSFET On-state resistance: 5Ω Drain current: 0.5A Drain-source voltage: 60V Power dissipation: 0.83W Polarisation: unipolar Kind of package: reel; tape Technology: DMOS Kind of channel: enhanced Gate-source voltage: ±20V Case: TO92 Pulsed drain current: 1.2A |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D27Z | Hersteller : onsemi |
Description: MOSFET N-CH 60V 500MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 2602 Stücke: Lieferzeit 21-28 Tag (e) |
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BS170-D27Z | Hersteller : onsemi / Fairchild | MOSFET N-Ch Enhancement Mode Field Effect |
auf Bestellung 5299 Stücke: Lieferzeit 14-28 Tag (e) |
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BS170"D27Z | Hersteller : ONSEMI |
Description: ONSEMI - BS170"D27Z - N CHANNEL MOSFET, 60V, 500mA, TO-92 tariffCode: 85412100 Transistormontage: Through Hole Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 830mW Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm directShipCharge: 25 SVHC: No SVHC |
auf Bestellung 2841 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D27Z | Hersteller : ONSEMI |
Description: ONSEMI - BS170-D27Z - Leistungs-MOSFET, n-Kanal, 60 V, 500 mA, 1.2 ohm, TO-92, Durchsteckmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 830mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm |
auf Bestellung 1335 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D27Z | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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BS170-D27Z | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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BS170-D27Z | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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BS170-D27Z | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |