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BS170-D74Z

BS170-D74Z onsemi


FAIRS29185-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 20000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.25 EUR
6000+ 0.24 EUR
10000+ 0.22 EUR
Mindestbestellmenge: 2000
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Technische Details BS170-D74Z onsemi

Description: MOSFET N-CH 60V 500MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V, Power Dissipation (Max): 830mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.

Weitere Produktangebote BS170-D74Z nach Preis ab 0.23 EUR bis 0.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BS170-D74Z BS170-D74Z Hersteller : onsemi / Fairchild MMBF170_D-3179750.pdf MOSFET NCh Enhancement Mode
auf Bestellung 24074 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
69+ 0.76 EUR
102+ 0.51 EUR
1000+ 0.29 EUR
2000+ 0.27 EUR
10000+ 0.23 EUR
Mindestbestellmenge: 57
BS170-D74Z BS170-D74Z Hersteller : onsemi FAIRS29185-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 1242 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
37+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 28
BS170-D74Z BS170-D74Z Hersteller : ON Semiconductor mmbf170-d.pdf Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
BS170D74Z
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
BS170-D74Z BS170-D74Z Hersteller : ON Semiconductor mmbf170-d.pdf Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo
Produkt ist nicht verfügbar
BS170-D74Z Hersteller : ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Mounting: THT
Type of transistor: N-MOSFET
On-state resistance:
Drain current: 0.5A
Drain-source voltage: 60V
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO92
Pulsed drain current: 1.2A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BS170-D74Z Hersteller : ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Mounting: THT
Type of transistor: N-MOSFET
On-state resistance:
Drain current: 0.5A
Drain-source voltage: 60V
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO92
Pulsed drain current: 1.2A
Produkt ist nicht verfügbar