BS170-D75Z onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 22000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 10000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BS170-D75Z onsemi
Description: MOSFET N-CH 60V 500MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V, Power Dissipation (Max): 830mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote BS170-D75Z nach Preis ab 0.11 EUR bis 0.94 EUR
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BS170-D75Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 330 Stücke: Lieferzeit 7-14 Tag (e) |
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BS170-D75Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D75Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo |
auf Bestellung 6649 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D75Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo |
auf Bestellung 6649 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D75Z | Hersteller : onsemi |
Description: MOSFET N-CH 60V 500MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 14156 Stücke: Lieferzeit 21-28 Tag (e) |
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BS170-D75Z | Hersteller : onsemi / Fairchild |
MOSFET N-Ch Enhancement Mode Field Effect |
auf Bestellung 35166 Stücke: Lieferzeit 14-28 Tag (e) |
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BS170-D75Z | Hersteller : ONSEMI |
Description: ONSEMI - BS170-D75Z - Leistungs-MOSFET, n-Kanal, 60 V, 500 mA, 1.2 ohm, TO-226AA, Durchsteckmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 830mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm |
auf Bestellung 5740 Stücke: Lieferzeit 14-21 Tag (e) |
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| BS170-D75Z | Hersteller : ONSEMI |
Description: ONSEMI - BS170-D75Z - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 6212 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D75Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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BS170-D75Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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BS170-D75Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |