BSC886N03LSG Infineon Technologies
auf Bestellung 4609 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1205+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC886N03LSG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Weitere Produktangebote BSC886N03LSG nach Preis ab 0.65 EUR bis 2.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSC886N03LS G | Hersteller : Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
BSC886N03LS G | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 65A TDSON-8 |
auf Bestellung 33 Stücke: Lieferzeit 14-28 Tag (e) |
|