BSF110N06NT3GXUMA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric ST, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 33µA, Supplier Device Package: MG-WDSON-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V.