auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
| 20000+ | 0.11 EUR |
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Technische Details BSH103,235 Nexperia
Description: MOSFET N-CH 30V 850MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 850mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, Power Dissipation (Max): 540mW (Ta), Vgs(th) (Max) @ Id: 400mV @ 1mA (Min), Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V.
Weitere Produktangebote BSH103,235 nach Preis ab 0.12 EUR bis 0.94 EUR
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BSH103,235 | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 0.85A 3-Pin SOT-23 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH103,235 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 850MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 400mV @ 1mA (Min) Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSH103,235 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 850MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 400mV @ 1mA (Min) Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V |
auf Bestellung 43703 Stücke: Lieferzeit 21-28 Tag (e) |
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BSH103,235 | Hersteller : Nexperia |
MOSFET BSH103/SOT23/TO-236AB |
auf Bestellung 9146 Stücke: Lieferzeit 14-28 Tag (e) |
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BSH103,235 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 0.85A 3-Pin SOT-23 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH103,235 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 0.85A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |