BSH105,235

BSH105,235 Nexperia USA Inc.


BSH105.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
auf Bestellung 60000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.2 EUR
30000+ 0.19 EUR
50000+ 0.18 EUR
Mindestbestellmenge: 10000
Produktrezensionen
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Technische Details BSH105,235 Nexperia USA Inc.

Description: MOSFET N-CH 20V 1.05A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V, Power Dissipation (Max): 417mW (Ta), Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ), Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V.

Weitere Produktangebote BSH105,235 nach Preis ab 0.19 EUR bis 0.85 EUR

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Preis ohne MwSt
BSH105,235 BSH105,235 Hersteller : Nexperia USA Inc. BSH105.pdf Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
auf Bestellung 76660 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
5000+ 0.22 EUR
Mindestbestellmenge: 32
BSH105,235 BSH105,235 Hersteller : Nexperia BSH105-2937838.pdf MOSFET BSH105/SOT23/TO-236AB
auf Bestellung 17054 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
62+0.85 EUR
79+ 0.66 EUR
148+ 0.35 EUR
1000+ 0.23 EUR
2500+ 0.22 EUR
10000+ 0.2 EUR
20000+ 0.19 EUR
Mindestbestellmenge: 62
BSH105,235 BSH105,235 Hersteller : Nexperia 173295327811018bsh105.pdf Trans MOSFET N-CH 20V 1.05A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BSH105,235 BSH105,235 Hersteller : NEXPERIA 173295327811018bsh105.pdf Trans MOSFET N-CH 20V 1.05A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar