BSP100,135 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NEXPERIA BSP100 - 3.5A, 30V, 0.1
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
auf Bestellung 23578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1480+ | 0.33 EUR |
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Technische Details BSP100,135 NXP Semiconductors
Description: NEXPERIA BSP100 - 3.5A, 30V, 0.1, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Power Dissipation (Max): 8.3W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V.
Weitere Produktangebote BSP100,135
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSP100,135 | Hersteller : NEXPERIA |
Description: NEXPERIA - BSP100,135 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 15920 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP100,135 | Hersteller : NEXPERIA |
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