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BSS138 RFG

BSS138 RFG Taiwan Semiconductor Corporation

BSS138_A2007.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.071 EUR
6000+ 0.068 EUR
9000+ 0.064 EUR
Mindestbestellmenge: 3000
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Technische Details BSS138 RFG Taiwan Semiconductor Corporation

Description: 50V, 0.26A, SINGLE N-CHANNEL POW, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V, Power Dissipation (Max): 357mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V.

Weitere Produktangebote BSS138 RFG nach Preis ab 0.069 EUR bis 0.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor Corporation BSS138_A2007.pdf Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 48722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
127+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 46
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor BSS138_A2007.pdf MOSFETs 50V, 0.26A, Single N-Channel Power MOSFET
auf Bestellung 15341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.41 EUR
10+ 0.29 EUR
100+ 0.12 EUR
1000+ 0.088 EUR
3000+ 0.069 EUR
Mindestbestellmenge: 7
BSS138 RFG Hersteller : Taiwan Semiconductor bss138_a2007.pdf Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor bss138_a2007.pdf Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar