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BSS138 RFG

BSS138 RFG Taiwan Semiconductor Corporation

BSS138_A2007.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
9000+ 0.087 EUR
30000+ 0.085 EUR
Mindestbestellmenge: 3000
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Technische Details BSS138 RFG Taiwan Semiconductor Corporation

Description: 50V, 0.26A, SINGLE N-CHANNEL POW, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V, Power Dissipation (Max): 357mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V.

Weitere Produktangebote BSS138 RFG nach Preis ab 0.12 EUR bis 0.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor Corporation BSS138_A2007.pdf Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
auf Bestellung 55298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.41 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor BSS138_A2007.pdf MOSFET 50V, 0.26A, Single N-Channel Power MOSFET
auf Bestellung 18530 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
62+0.85 EUR
87+ 0.6 EUR
209+ 0.25 EUR
1000+ 0.18 EUR
3000+ 0.15 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 62
BSS138 RFG Hersteller : Taiwan Semiconductor bss138_a2007.pdf Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BSS138 RFG BSS138 RFG Hersteller : Taiwan Semiconductor bss138_a2007.pdf Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar