BSS138AKA/LF1R Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
Qualification: AEC-Q101
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Technische Details BSS138AKA/LF1R Nexperia USA Inc.
Description: MOSFET N-CH 60V 200MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, Power Dissipation (Max): 1.06W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250A, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V, Qualification: AEC-Q101.