BST82,235 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 190MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.21 EUR |
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Technische Details BST82,235 Nexperia USA Inc.
Description: MOSFET N-CH 100V 190MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote BST82,235 nach Preis ab 0.2 EUR bis 0.92 EUR
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BST82,235 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 190MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 10973 Stücke: Lieferzeit 21-28 Tag (e) |
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BST82,235 | Hersteller : Nexperia |
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auf Bestellung 5303 Stücke: Lieferzeit 14-28 Tag (e) |
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BST82,235 | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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BST82,235 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R |
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BST82,235 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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BST82,235 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |