Produkte > NXP SEMICONDUCTORS > BUK6212-40C,118
BUK6212-40C,118

BUK6212-40C,118 NXP Semiconductors


BUK6212-40C.pdf Hersteller: NXP Semiconductors
Description: NEXPERIA BUK6212-40C - 50A, 40V,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 12A, 10V
Power Dissipation (Max): 80W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5239 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
919+0.78 EUR
Mindestbestellmenge: 919
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK6212-40C,118 NXP Semiconductors

Description: NEXPERIA BUK6212-40C - 50A, 40V,, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 12A, 10V, Power Dissipation (Max): 80W, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK6212-40C,118

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BUK6212-40C,118 BUK6212-40C,118 Hersteller : Nexperia BUK6212-40C-1151283.pdf MOSFET N-CHAN 40V 50A
Produkt ist nicht verfügbar