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BUK663R2-40C,118

BUK663R2-40C,118 Nexperia USA Inc.


BUK663R2-40C.pdf Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK663R2-40C - 100A, 40
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
auf Bestellung 14413 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
601+1.3 EUR
Mindestbestellmenge: 601
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Technische Details BUK663R2-40C,118 Nexperia USA Inc.

Description: NEXPERIA BUK663R2-40C - 100A, 40, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Power Dissipation (Max): 204W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V.

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BUK663R2-40C,118 Hersteller : Nexperia BUK663R2-40C.pdf MOSFET N-CHAN 40V 100A
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