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BUK6D230-80EX

BUK6D230-80EX Nexperia USA Inc.


BUK6D230-80E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
Mindestbestellmenge: 3000
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Technische Details BUK6D230-80EX Nexperia USA Inc.

Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK6D230-80EX nach Preis ab 0.23 EUR bis 1.02 EUR

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BUK6D230-80EX BUK6D230-80EX Hersteller : Nexperia USA Inc. BUK6D230-80E.pdf Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8537 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
34+ 0.77 EUR
100+ 0.46 EUR
500+ 0.43 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 27
BUK6D230-80EX BUK6D230-80EX Hersteller : Nexperia BUK6D230_80E-2937569.pdf MOSFET BUK6D230-80E/SOT1220/SOT1220
auf Bestellung 15914 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
69+ 0.76 EUR
119+ 0.44 EUR
1000+ 0.3 EUR
3000+ 0.26 EUR
9000+ 0.24 EUR
24000+ 0.23 EUR
Mindestbestellmenge: 52
BUK6D230-80EX BUK6D230-80EX Hersteller : NEXPERIA buk6d230-80e.pdf 80 V, N-channel Trench MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
BUK6D230-80EX BUK6D230-80EX Hersteller : Nexperia buk6d230-80e.pdf 80 V, N-channel Trench MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
BUK6D230-80EX Hersteller : NEXPERIA BUK6D230-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D230-80EX Hersteller : NEXPERIA BUK6D230-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar