BUK6D56-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
| 30000+ | 0.28 EUR |
| 75000+ | 0.27 EUR |
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Technische Details BUK6D56-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A/11A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK6D56-60EX nach Preis ab 0.29 EUR bis 1.23 EUR
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BUK6D56-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4A/11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 110718 Stücke: Lieferzeit 21-28 Tag (e) |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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