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BUK6Y14-40PX

BUK6Y14-40PX NEXPERIA


BUK6Y14-40P.pdf Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
48+1.5 EUR
55+ 1.32 EUR
76+ 0.94 EUR
80+ 0.9 EUR
Mindestbestellmenge: 48
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Technische Details BUK6Y14-40PX NEXPERIA

Description: MOSFET P-CH 40V 64A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V, Power Dissipation (Max): 110W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V, Qualification: AEC-Q101.

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BUK6Y14-40PX BUK6Y14-40PX Hersteller : NEXPERIA BUK6Y14-40P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
48+1.5 EUR
55+ 1.32 EUR
76+ 0.94 EUR
80+ 0.9 EUR
Mindestbestellmenge: 48
BUK6Y14-40PX BUK6Y14-40PX Hersteller : Nexperia USA Inc. BUK6Y14-40P.pdf Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1038 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
12+ 2.32 EUR
100+ 1.81 EUR
500+ 1.53 EUR
Mindestbestellmenge: 10
BUK6Y14-40PX BUK6Y14-40PX Hersteller : Nexperia BUK6Y14-40P-1839873.pdf MOSFET BUK6Y14-40P/SOT669/LFPAK
auf Bestellung 30564 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.89 EUR
23+ 2.36 EUR
100+ 1.84 EUR
500+ 1.56 EUR
1000+ 1.43 EUR
1500+ 1.29 EUR
3000+ 1.16 EUR
Mindestbestellmenge: 19
BUK6Y14-40PX BUK6Y14-40PX Hersteller : NEXPERIA buk6y14-40p.pdf Trans MOSFET P-CH 40V 64A Automotive 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
BUK6Y14-40PX BUK6Y14-40PX Hersteller : Nexperia buk6y14-40p.pdf Trans MOSFET P-CH 40V 64A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK6Y14-40PX BUK6Y14-40PX Hersteller : Nexperia buk6y14-40p.pdf Trans MOSFET P-CH 40V 64A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK6Y14-40PX BUK6Y14-40PX Hersteller : Nexperia USA Inc. BUK6Y14-40P.pdf Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar