BUK72150-55A,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.77 EUR |
| 5000+ | 0.73 EUR |
| 12500+ | 0.68 EUR |
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Technische Details BUK72150-55A,118 Nexperia USA Inc.
Description: MOSFET N-CH 55V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: DPAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK72150-55A,118 nach Preis ab 0.77 EUR bis 2.15 EUR
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BUK72150-55A,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 19877 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK72150-55A,118 | Hersteller : Nexperia |
MOSFET BUK72150-55A/SOT428/DPAK |
auf Bestellung 10035 Stücke: Lieferzeit 14-28 Tag (e) |
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| BUK72150-55A,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK Polarisation: unipolar Case: DPAK Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Drain-source voltage: 55V Drain current: 7A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK72150-55A,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK Polarisation: unipolar Case: DPAK Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Drain-source voltage: 55V Drain current: 7A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 36W |
Produkt ist nicht verfügbar |