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BUK7509-55A,127

BUK7509-55A,127 NXP Semiconductors


PHGLS22268-1.pdf?t.download=true&u=5oefqw Hersteller: NXP Semiconductors
Description: NEXPERIA BUK7509-55A - 75A, 55V,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3370 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
533+1.33 EUR
Mindestbestellmenge: 533
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Technische Details BUK7509-55A,127 NXP Semiconductors

Description: NEXPERIA BUK7509-55A - 75A, 55V,, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V, Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BUK7509-55A,127 BUK7509-55A,127 Hersteller : Nexperia BUK7509-55A-1598669.pdf MOSFET Trans MOSFET N-CH 55V 108A 3Pin(3+Tab)
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