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BUK765R2-40B,118

BUK765R2-40B,118 NXP USA Inc.

BUK765R2-40B.pdf Hersteller: NXP USA Inc.
Description: TRANSISTOR >30MHZ
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
auf Bestellung 13590 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
379+1.89 EUR
Mindestbestellmenge: 379
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Technische Details BUK765R2-40B,118 NXP USA Inc.

Description: TRANSISTOR >30MHZ, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V, Power Dissipation (Max): 203W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V.

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BUK765R2-40B,118 BUK765R2-40B,118 Hersteller : Nexperia USA Inc. BUK765R2-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
Mindestbestellmenge: 6
BUK765R2-40B,118
Produktcode: 178127 		BUK765R2-40B.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
BUK765R2-40B,118 BUK765R2-40B,118 Hersteller : Nexperia USA Inc. BUK765R2-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
Produkt ist nicht verfügbar
BUK765R2-40B,118 BUK765R2-40B,118 Hersteller : Nexperia BUK765R2-40B-1319990.pdf MOSFET HIGH PERF TRENCHMOS
Produkt ist nicht verfügbar