BUK7K5R6-30E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.78 EUR |
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Technische Details BUK7K5R6-30E,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote BUK7K5R6-30E,115 nach Preis ab 1.61 EUR bis 3.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7K5R6-30E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2951 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7K5R6-30E,115 | Hersteller : Nexperia | MOSFET BUK7K5R6-30E/SOT1205/LFPAK56D |
auf Bestellung 1472 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7K5R6-30E,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 40A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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BUK7K5R6-30E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W Mounting: SMD Case: LFPAK33; SOT1210 Drain current: 40A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 314A Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7K5R6-30E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W Mounting: SMD Case: LFPAK33; SOT1210 Drain current: 40A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 314A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |