BUK7M19-60EX Nexperia
auf Bestellung 2839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
224+ | 0.71 EUR |
225+ | 0.68 EUR |
267+ | 0.55 EUR |
268+ | 0.53 EUR |
500+ | 0.46 EUR |
1000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7M19-60EX Nexperia
Description: MOSFET N-CH 60V 35.8A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7M19-60EX nach Preis ab 0.34 EUR bis 2.35 EUR
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BUK7M19-60EX | Hersteller : Nexperia | Trans MOSFET N-CH 60V 36A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 2839 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7M19-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 35.8A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 988 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7M19-60EX | Hersteller : Nexperia | MOSFET BUK7M19-60E/SOT1210/mLFPAK |
auf Bestellung 3914 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7M19-60EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK7M19-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 36 A, 0.015 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 55W Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7M19-60EX | Hersteller : Nexperia | Trans MOSFET N-CH 60V 36A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M19-60EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 60V 36A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M19-60EX | Hersteller : Nexperia | Trans MOSFET N-CH 60V 36A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M19-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25.3A Pulsed drain current: 143A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 42mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7M19-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 35.8A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK7M19-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25.3A Pulsed drain current: 143A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 42mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |